Pelgrom matching properties of mos transistors pdf

Mos transistor matching at low temperature for analog. It could be shown that large area mos transistors are subject to a matching accuracy. Process variation and pelgroms law university of toronto. Citeseerx document details isaac councill, lee giles, pradeep teregowda. The matching properties of the threshold voltage, substrate factor, and current factor of mos transistors have been analyzed and measured.

This paper gives an overview of mosfet mismatch effects that form a performanceyield limitation for many designs. Improvements to the existing theory are given, as well as extensions for longdistance matching and rotation of devices. Circuit operation greatly depends on the ability to control and reproduce transistor and process parameters, such as oxide thickness, dielectric constants, doping levels, width and length. Pdf transistor matching in analog cmos applications. Abstractthe matching properties of the threshold voltage, substrate factor, and current factor of mos transistors have been analyzed and measured.

Matching properties of mos transistors sciencedirect. In this article, we step back and look at dc operation of a simple current mirror and how the process variation can affect the. Matching properties of mos transistors ieee journals. Each point corresponds to the data of several wafers in one batch. Process variation and pelgroms law digital object identifier 10. Matching of mos transistors with different layout styles. Normalized standard deviation of the current in an nmos transistor pair connected to 5 v drain. Pelgrom, matching properties of mos transistors, ieee jssc. A layoutbased statistical modeling for the prediction of matching properties of mos transistors. Mos transistor matching at low temperature for analog circuit design p. Improvements to the existing theory are giveu, as well as. Matching properties of mos transistors solidstate circuits, ieee jour nal of author. Welbers abstract the matching properties of the threshold voltage, substrate factor, aud current factor of mos transistors have been analyzed and measrrred.